Lawrence Livermore National Laboratory



Tian Li

Postdoctoral Appointment
Materials Science Division


 +1 925-423-9214


DegreeDiscipline/InstitutionYear
Ph.D. Material Science and Engineering
University of Illinois at Urbana-Champaign
2013
B.S. Combined Physics and Mathematics
University of British Columbia
2006

Research Interests

My research focuses on characterizing nanostructure of diffraction-amorphous materials during their crystallization process. The primary tool of my research is the Dynamic Transmission Electron Microscope (DTEM) at LLNL. The DTEM has the unique capability of capturing the evolution of nanomaterial during in-situ experiments with nanosecond temporal resolution. By combining DTEM measurements with other statistical electron microscopy techniques such as Fluctuation Electron Microscopy (FEM), and computer simulations, I try to tackle how various factors, such as composition, thermal history, and deposition methods, affect the kinetics and thermodynamics of the crystallization process.


Selected (Recent) Publications

  • Li T., Bogle, S.N. and Abelson J. R., Quantitative Fluctuation Electron Microscopy in the STEM: Methods to Identify, Avoid, and Correct for Artifacts, Microscopy and Microanalysis, 20(5), 1605 (2014).
  • Li T. and Abelson J. R., Quantifying nanoscale order in amorphous material via scattering covariance in fluctuation electron microscopy, Ultramicroscopy, 133, 95 (2013)
  • Li T., Lee T. H. Elliott S. R. and Abelson J. R., Preferred Orientation of Nanoscale Order at the Surface of Ge2Sb2Te5 Thin film, Applied Physics Letters, 103, 201907 (2013)
  • Tao S., Treacy M. M. J., Li T., Zaluzec N. J., and Gibson J. M., Electron correlograph analysis for disordered structure: a practical guide through reliable data analysis, Microscopy and Microanalysis, 20(2), 627 (2014)
  • Darmawikarta K., Li T., Bishop S. G., and Abelson J. R., Two forms of nanoscale order in amorphous GexSe1-x alloys, Applied Physics Letters, 103, 131908 (2013)
  • Babar S., Li T. and Abelson J. R., Role of nucleation layer morphology in determining the statistical roughness of CVD-grown thin films, J. Vac. Sci. Technol. A, 32, 060601 (2014)
  • Darmawikata K., Raoux S., Tchoulian P., Li T., and Abelson J.R., Evolution of subcritical nuclei in nitrogen-alloyed Ge2Sb2Te5, Journal of Applied Physics, 112, 124907 (2012)
  • Haberl B., Bogel S. N., Li T., I. McKerracher, S. Ruffell, P. Munroe, J. S. Williams, J. R. Abelson, and J. E. Bradby, Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing, Journal of Applied Physics, 110 096104 (2011)

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