Group Leader - Optical Materials
and Target Science
Materials Science Division
Associate Program Manager in Optics
and Material S&T
NIF and Photon Sciences
University of Illinois, Champaign-Urbana
University of Illinois, Champaign-Urbana
My research interests include optical and electronic materials and devices, computational physics, the prevention and mitigation of laser-induced damage in high power, high fluence optical materials, laser-material interactions, and laser-based material processing.
S. Ly, T. Laurence, N. Shen, B. Hollingsworth, M. Norton, and J. Bude, "Giga-shot optical damage in silica optics at 351nm,"
J. Bude, P. Miller, T. Suratwala, T. Laurence, W. Steele, S. Baxamusa, L. Wong, C. Carr, D. Cross, M. Monticelli, M. Feit, G. Guss, "Silica laser damage mechanisms, precursors and their mitigation,"
S. Baxamusa, PE Miller, L. Wong, R. Steete, N. Shen, J. Bude, "Mitigation of organic laser damage precursors from chemical processing of fused silica,"
J. Bude, P. Miller, S. Baxamusa, N. Shen, T. Laurence, W. Steele, T. Suratwala, L. Wong, W. Carr, D. Cross and M. Monticelli, "High fluence laser damage precursors and their mitigation in fused silica,"
T. Laurence, J. Bude, N. Shen, "Quasi-continuum photoluminescence: usual broad spectral and temporal characteristics found in defect surfaces of silica and other materials,"
N. Shen, J. Bude. C. Carr, "Model laser damage precursors for high quality optical materials,"
T. Laurence, J. Bude, S. Ly, N. Shen, "Extracting the distribution of laser damage precursors on fused silica surfaces for 351nm, 3ns laser pulses at high fluences (20-150J/cm2),
J. Kline et al, "Hohlram energetics scaling to 520 TW on the National Ignition Facility,"
B. Sadigh, P. Erhart, D. Aberg, A. Trave, E. Schwegler, J. Bude, "First,-Principles calculations of the Urbach Tail in the Optical Absorption Spectra of Silica Glass,"
T. Suratwala, P. Miller, J. Bude, W. Steele, N. Shen, M. Monticelli, M. Feit, T. Laurence, M. Norton, C. Carr, L. Wong, "HF-Based etching processes for improving laser damage resistance of fused silica optical surfaces,"
C. Carr, J. Bude, "Laser-supported solid-state absorption fronts in silica,"
P. Miller, J. Bude, T. Suratwala, N. Shen, T. Laurence, W. Steele, J. Menapace, M. Feit, L. Wong, "Fracture-induced sub-bandgap absorption as a precursor to optical damage on fused silica surface,"
J. Adams M. Bolourchi, J. Bude, et al, "Results of applying a non-evaporative mitigation technique to laser-initiated surface damage on fused silica optics,"
P. Miller, T. Suratwala, J. Bude et al, "Laser damage precursors in fused silica,"
T. Laurence, J. Bude, N. Shen, T. Feldman, P. Miller, W. Steele, T. Suratwala, "Metallic-like photoluminescence and absorption in fused silica flaws,"
J. Bude, G. Guss, M. Matthews, M.L. Spaeth, "The effect of lattice temperature on surface damage in fused silica optics,"
Ye, P.D., Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Hong, M.; Ng, K.K.; Bude, J. "Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition,"
M.R. Pinto, E. Sangiorgi, J. Bude, "Silicon transconductance scaling into the overshoot regime,"
J. Bude and K. Hess, "Thresholds of Impact Ionization in semiconductors,"
J. Bude, K. Hess, G.J. Iafrate, "Impact ionization in semiconductors: beyond the golden rule,"
J. Bude, N. Sano, A. Yoshii, "Hot electron luminescence in silicon,"
P.D. Ye, D.G. Wilk, B. Yang, S. Chu, K. Ng, J. Bude, "Improvement of GaAs metal-semiconductor field-effect transistor drain-source breakdown voltage by oxide surface passivation grown by atomic layer deposition,"
D. Esseni, J. Bude, Luca Selmi, "On interface and oxide degradation in VLSI MOSFETs - Part I: Deuterium Effect in CHE Stress Regime,"
D. Esseni, J. Bude, Luca Selmi, "On interface and oxide degradation in VLSI MOSFETs - Part II: Fowler-Nordheim Stress Regime,"
J. D. Bude, M.R. Pinto , R. K. Smith, "Monte Carlo Simulation of the CHISEL Flash Memory Cell,"
M. Alam, J. Bude, A. Ghetti, "Field Acceleration for Oxide Breakdown – Can an Accurate Anode Hole Injection Resolve the E vs. 1/E Controversy,"
Nair, D.R., Mahapatra, S.; Shukuri, S.; Bude, J., "Explanation of P/E cycling impact on drain disturb in flash EEPROMs under CHE and CHISEL programming operation,"
J.D. Bude, A. Frommer, M.R. Pinto, G.R. Weber, "EEPROM/Flash sub 3V drain-source bias hot carrier writing,"
J.D. Bude, "Gate current by impact ionization feedback in sub-micron MOSFET technologies,"
P.D. Ye, B. Yang, K.K. Ng, J. Bude, G.D. Wilk, S. Halder, J.C.M. Hwang, "GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric,"
Nair D.R.; Mahapatra, S.; Shukuri, S.; Bude, J.D., "Drain disturb during CHISEL programming of NOR flash EEPROMs-physical mechanisms and impact of technological parameters,"
G. Timp, J. Bude, K. Bourdelle, J. Garno, M. Green, H. Gossmann, G. Forsyth, Y. Kim, R. Kleiman, A. Kornblit, F. Klemens, C. Lochstampfor, W. Mansfield, S. Moccio, T. Sorsch, W. Timp, D. Tennant, R. Tung, "The Ballistic Nano-transistor," 1999
G. Timp, J. Bude, K. Bourdelle, J. Garno, M. Green, H. Gossmann, Y. Kim, R. Kleiman, A. Kornblit, F. Klemens, S. Moccio, D. Muller, P. Silverman, T. Sorsch, W. Timp, D. Tennant, R. Tung, B. Weir, "35nm CMOS Technology and the Unrelenting March to Zero,"